Monolithic active pixel sensor realized in SOI technology - concept and verification
نویسندگان
چکیده
The paper presents the concept and the verification of a novel silicon monolithic active pixel detector realized in the SOI technology. The reliability and the basic electrical characteristics of the sensor are studied and the sensor sensitivity to the ionising radiation is investigated in details. 2004 Elsevier Ltd. All rights reserved.
منابع مشابه
A Monolithic Pixel Sensor in 0.15 μm Fully Depleted SOI Technology
This letter presents the design of a monolithic pixel sensor with 10×10 μm pixels in OKI 0.15 μm fully depleted SOI technology and first results of its characterisation. The response of the chip to charged particles has been studied on the 1.35 GeV e− beam at the LBNL ALS.
متن کاملEvaluation of Monolithic Silicon-On-Insulator Pixel Devices Thinned to 100 m
Abstract– We are developing monolithic pixel devices utilizing a 0.2 μm Fully Depleted Silicon-on-Insulator (FD-SOI) process technology provided by OKI Semiconductor. We have investigated thinning the devices to 100 μm. Thinning enhances the feature of monolithic SOI sensors in views of minimizing the overall material and realizing full depleted devices. The latter is necessary for backside il...
متن کاملTotal dose effects on deep-submicron SOI technology for Monolithic Pixel Sensor development
We developed and characterized Monolithic pixel detectors in deep-submicron Fully Depleted (FD) Silicon On Insulator (SOI) technology. This paper presents the first studies of total dose effects from ionizing radiation performed on single transistor test structures. This work shows how the substrate bias condition during irradiation heavily affects the resulting radiation damage.
متن کاملMonolithic Active Pixel Matrix with Binary Counters in an SOI Process
The design of a prototype monolithic active pixel matrix, designed in a 0.15 μm CMOS SOI process, is presented. The process allowed connection between the electronics and the silicon volume under the layer of buried oxide (BOX). The small size vias traversing through the BOX and implantation of small p-type islands in the n-type bulk result in a monolithic imager. During the acquisition time, a...
متن کاملMonolithic Pixel Sensors in Deep-Submicron SOI Technology with Analog and Digital Pixels
This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fullydepleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics is insulated from a (high-resistivity) silicon substrate by a buried oxide. Vias etched through the oxide allow to contact the substrate from the electronics l...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Microelectronics Reliability
دوره 45 شماره
صفحات -
تاریخ انتشار 2005